Use of transaction analysis and probabilistic modeling for evaluation of retrieval systemsTOLLE, J. E.Recherche d'informations assistée par ordinateur. Colloque. 1985, pp 387-402Conference Paper

Nucleation and growth of epitaxial ZrB₂(0001) on Si(111)HU, C.-W; CHIZMESHYA, A. V. G; TOLLE, J et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 554-563, issn 0022-0248, 10 p.Article

INTOXICATION OF CELLS FROM DIFFERENT-AGED EMBRYOS BY DIPHTHERIA TOXINIGLEWSKI WJ; TAYLOR A; HODGES R et al.1979; INFECT. AND IMMUN.; USA; DA. 1979; VOL. 26; NO 2; PP. 458-461; BIBL. 16 REF.Article

Structural and optical properties of ZrB₂ and Hf_xZr_1-xB₂ films grown by vicinal surface epitaxy on Si(111) substratesROUCKA, R; AN, Y.-J; CHIZMESHYA, A. V. G et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1687-1690, issn 0038-1101, 4 p.Article

Epitaxial film growth of zirconium diboride on Si(001)ROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Journal of crystal growth. 2005, Vol 277, Num 1-4, pp 364-371, issn 0022-0248, 8 p.Article

Surface and interface studies of GaN epitaxy on Si(111) via ZrB₂ buffer layersYAMADA-TAKAMURA, Yukiko; WANG, Z. T; FUJIKAWA, Y et al.Physical review letters. 2005, Vol 95, Num 26, pp 266105.1-266105.4, issn 0031-9007Article

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlNROUCKA, R; TOLLE, J; CHIZMESHYA, A. V. G et al.Applied surface science. 2003, Vol 212-13, pp 872-878, issn 0169-4332, 7 p.Conference Paper

Molecular approaches to p- and n-nanoscale doping of Ge_1-ySn_y semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

Raman scattering in Ge_1-ySn_y alloysD'COSTA, V. R; TOLLE, J; ROUCKA, R et al.Solid state communications. 2007, Vol 144, Num 5-6, pp 240-244, issn 0038-1098, 5 p.Article

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductorsD'COSTA, V. R; FANG, Y.-Y; TOLLE, J et al.Thin solid films. 2010, Vol 518, Num 9, pp 2531-2537, issn 0040-6090, 7 p.Conference Paper

Highly strained metastable structures and selective area epitaxy of Ge-rich Ge_1-xSi_x/Si(100) materials using nanoscale building blocksFANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Solid state communications. 2009, Vol 149, Num 1-2, pp 78-81, issn 0038-1098, 4 p.Article

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)FANG, Y.-Y; D'COSTA, V. R; TOLLE, J et al.Thin solid films. 2008, Vol 516, Num 23, pp 8327-8332, issn 0040-6090, 6 p.Article

A sparse sequential quadratic programming algorithmNICKEL, R. H; TOLLE, J. W.Journal of optimization theory and applications. 1989, Vol 60, Num 3, pp 453-473, issn 0022-3239Article

A family of descent functions for constrained optimizationBOGGS, P. T; TOLLE, J. W.SIAM journal on numerical analysis. 1984, Vol 21, Num 6, pp 1146-1161, issn 0036-1429Article

HIGH LEVEL OF TYROSINE PROTEIN KINASE IN A MURINE LYMPHOMA CELL LINE INDUCED BY MOLONEY LEUKEMIA VIRUSGACON G; GISSELBRECHT S; PIAU JP et al.1982; EMBO JOURNAL; ISSN 0261-4189; GBR; DA. 1982; VOL. 1; NO 12; PP. 1579-1582; BIBL. 20 REF.Article

A strategy for global convergence in a sequential quadratic programming algorithmBOGGS, P. T; TOLLE, J. W.SIAM journal on numerical analysis. 1989, Vol 26, Num 3, pp 600-623, issn 0036-1429Article

Determining the required number of online catalog terminals: a research studyTOLLE, J. E; SANDERS, N. P; KASKE, N. K et al.Information technology and libraries. 1983, Vol 2, Num 3, pp 261-265, issn 0730-9295Article

On-line damage detection and monitoring at thin sheet joints for deriving failure criteriaSCHMIDT, H; TÖLLE, J; BRUDER, T et al.Matériaux et techniques. 2011, Vol 99, Num 7, pp 743-750, issn 0032-6895, 8 p.Article

Barker dam stabilization = Stabilisation de barrage BarkerMOSS, A. S. E; NOBLE, H; ROBINSON, C. S et al.Renforcement en place des sols et des roches. Colloque international. 1984, pp 279-284Conference Paper

Metal-doped sodium aluminium hydrides as potential new hydrogen storage materialsBOGDANOVIC, B; BRAND, R. A; MARJANOVIC, A et al.Journal of alloys and compounds. 2000, Vol 302, pp 36-58, issn 0925-8388Article